On February 4, Jingsheng's new product launch conference of the 6-inch double-chip silicon carbide epitaxial equipment was successfully concluded, marking a significant breakthrough in the third generation semiconductor.

Unveiling Ceremony of 6-inch Double-chip Silicon Carbide Epitaxial Equipment

During the new product launch phase, Liu Yi, director of Jingsheng's Epitaxial Equipment Research Institute, gave a detailed introduction to the core design concept and process performance of the "6-inch double-chip silicon carbide epitaxial equipment". After two years of R&D, testing and verification, this product has achieved international leading advantages in terms of extended production capacity, operating costs and other aspects. Compared to single-chip equipment, the single-set production capacity of new equipment has increased by 70%, while the single-chip operating cost has decreased by over 30%, helping customers create great value and contributing to the development of China's new energy industry.